Ion implantation is an important process in the manufacture of semiconductors. The most important part of an implanter system is the beam path. Here, the ions are generated, concentrated, accelerated, and targeted towards the wafer.
Our heat-resistant components are made from molybdenum and tungsten due to these materials ideal combination of corrosion resistance, strength, and high thermal conductivity.
Ion Implantation Components Properties:
High Melting point
Outstanding creep resistance
Excellent corrosion resistance
Good electrical and thermal conductivity
Outstanding purity
TZM Molybdenum is an alloy of 0.50% Titanium, 0.08% Zirconium and 0.02% Carbon with the balance Molybdenum. TZM Molybdenum is manufactured by either P/M or Arc Cast technologies and is of great utili
Composition Pure molybdenum Mo >99.95% Molybdenum alloy Mo-Nb (90at% Mo:10at% Nb) Mo-Cr (Mo 97 wt% Mo: 3 wt% Cr) Molybdenum compounds Molybdenum Telluride (MoTe2), 99.999% Molybdenum Selenide (MoS
Composition Pure molybdenum Mo >99.95% Molybdenum alloy Mo-Nb (90at% Mo:10at% Nb) Mo-Cr (Mo 97 wt% Mo: 3 wt% Cr) Molybdenum compounds Molybdenum Telluride (MoTe2), 99.999% Molybdenum Selenide (MoS
Application: As the heat-shield parts in the sapphire growth furnace, the most decisive function of molybdenum reflection shield is to prevent and reflect the heat in the furnace. Heat-shield parts w
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